My Report

VLSI Practice Test 9


Correct Answer: 2 points | Wrong: -1 point
Grades: A* (100% score) | A (80%-99%) | B (60%-80%) | C (40%-60%) | D (0%-40%)
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1. Schottky barrier is created due to the difference in

2. Standard deviation of threshold voltage should be ______ of logic voltage swing.

3. Switching delays of GaAs is in the range of

4. Saturation velocity is attained when

5. In DCFL inverter, enhancement mode device is called as

6. To keep dynamic switching energy small

7. Gallium arsenide crystals are grown from

8. Switching speed does not depend on

9. In bipolar transistor, transconductance is _______ to collector current.

10. Which has greater effective electron mass?


 

Manish Bhojasia - Founder & CTO at Sanfoundry
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He lives in Bangalore, and focuses on development of Linux Kernel, SAN Technologies, Advanced C, Data Structures & Alogrithms. Stay connected with him at LinkedIn.

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