VLSI Mock Test 1 - Sanfoundry

10%

Question 1 of 10

1. Increasing the transconductance ___________

increases input capacitance

decreasing area occupied

decreasing input capacitance

decrease in output capacitance

Question 1 of 10

Question 2 of 10

2. In bipolar transistor, its quality can be improved by __________

decreasing gate resistance

increasing collector resistance

collector resistance does not affect the quality

decreasing collector resistance

Question 2 of 10

Question 3 of 10

3. In diffusion process ______ impurity is desired.

p type

none of the mentioned

np type

n type

Question 3 of 10

Question 4 of 10

4. Speed power product is measured as the product of ____________

gate switching delay and gate power dissipation

gate switching delay and net gate power

gate power dissipation and absorption

gate switching delay and gate power absorption

Question 4 of 10

Question 5 of 10

5. What is the disadvantage of the MOS device?

limited voltage sourcing

limited voltage sinking

limited current sourcing

unlimited current sinking

Question 5 of 10

Question 6 of 10

6. The process by which Aluminium is grown over the entire wafer, also filling the contact cuts is?

Chemical vapour deposition

Epitaxial growth

Sputtering

Ion Implantation

Question 6 of 10

Question 7 of 10

7. P-well is created on __________

p & n substrate

none of the mentioned

p substrate

n substrate

Question 7 of 10

Question 8 of 10

8. Which process is involved in growing the shaded region?

Sputtering and patterned by etching

Chemical vapor deposition (CVD)

Chemical vapor deposition (CVD) and patterned by dry (plasma) etching

Chemical vapor deposition (CVD) and patterned by HF acid etching

Question 8 of 10

Question 9 of 10

9. In enhancement mode, device is in _________ condition.

insulating

partially conducting

conducting

non conducting

Question 9 of 10

Question 10 of 10

10. The dopants are introduced in the active areas of silicon by using which process?

Ion Implantation process

Either Diffusion or Ion Implantation Process

Chemical Vapour Deposition

Diffusion process

Question 10 of 10