My Report

VLSI Mock Test 9


Correct Answer: 2 points | Wrong: -1 point
Grades: A* (100% score) | A (80%-99%) | B (60%-80%) | C (40%-60%) | D (0%-40%)
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 10%

Question 1 of 10

1. Stable native oxide was produced by

Question 1 of 10

Question 2 of 10

2. Stress at the interface cannot arise from

Question 2 of 10

Question 3 of 10

3. Which causes degradation of transconductance?

Question 3 of 10

Question 4 of 10

4. Electron mobility of gallium arsenide is _______ that of silicon.

Question 4 of 10

Question 5 of 10

5. The range of kp in MESFET is

Question 5 of 10

Question 6 of 10

6. Gallium arsenide have _____ regions of operation.

Question 6 of 10

Question 7 of 10

7. Which is ON device?

Question 7 of 10

Question 8 of 10

8. The transconductance value in cut off region is

Question 8 of 10

Question 9 of 10

9. The GaAs fabrication has _________ gate geometry.

Question 9 of 10

Question 10 of 10

10. In MESFET for gate _____ junction is used.

Question 10 of 10


 

Manish Bhojasia - Founder & CTO at Sanfoundry
Manish Bhojasia, a technology veteran with 20+ years @ Cisco & Wipro, is Founder and CTO at Sanfoundry. He lives in Bangalore, and focuses on development of Linux Kernel, SAN Technologies, Advanced C, Data Structures & Alogrithms. Stay connected with him at LinkedIn.

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