VLSI Mock Test 10 - Sanfoundry

10%

Question 1 of 10

1. The mask is derived from the structural operation of masks.

true

false

Question 1 of 10

Question 2 of 10

2. The average power dissipated in resistive load n-MOS inverter is:

VDD (VDD-VIH)/2R

VDD (VDD-VOL)/R

VDD (VDD-VOL)/2R

Question 2 of 10

Question 3 of 10

3. When gate voltage is negative for enhancement mode n-MOS, the direction of electric field will be:

No field exists

None of the mentioned

Semiconductor to metal

Metal to semiconductor

Question 3 of 10

Question 4 of 10

4. In direct coupled logic, the input transistor base is connected to

collector output

base output

emitter output

ground

Question 4 of 10

Question 5 of 10

5. If gate-metal layer is in contact with the implant layer _____ is formed.

diode

transistor

buffer

switch

Question 5 of 10

Question 6 of 10

6. Field effect transistor's conductivity is regulated by

supply voltage

terminal voltage

output current

input current

Question 6 of 10

Question 7 of 10

7. The Uncertain or transition region is between:

VOH and VOL

VIH and VIL

VIH and VOH

VIL and VOL

Question 7 of 10

Question 8 of 10

8. The Fermi potential of the p-type MOSFET is:

φfp = (kT/q)ln(NA/ni)

φfp = (kT/q)ln(ni/NA)

φfp = (kT/q)ln(NA/ND)

φfp = (kT/q)ln(ND/NA)

Question 8 of 10

Question 9 of 10

9. In symbolic representation _________ is used to represent E-MESFET.

blue transistor

red transistor

yellow transistor

green transistor

Question 9 of 10

Question 10 of 10

10. The correct representation of n-MOSFET is:

vlsi-questions-answers-cmos-logic-gates-q5c

vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5a

vlsi-questions-answers-metal-oxide-semiconductor-transistor-1-q5b

None of the mentioned

Question 10 of 10