Optical Communication Practice Test 6

1. The mean square thermal noise current in the trans-impedance configuration is _________ greater than that obtained with the high-input-impedance configuration.

2. Compute multiplication factor of RAPD with output current of 10 μAand photocurrent of 0.369μA.

3. ___________ has more sophisticated structure than p-i-n photodiode.

4. Metal-semiconductor-metal (MSM) photo-detectors are photoconductive detectors.

5. What is usually required by FETs to optimize the figure of merit?

6. A phototransistor has collector current of 18 mA, incident optical power of 128 μW with a wavelength of 1.24 μm. Determine an optical gain.

7. Waveguide phototransistors utilize a ___________ waveguide layer under the _________ transistor region.

8. APDs do not operate at signal wavelengths between 1.3 and 1.6μm.

9. How many receiver structures are used to obtain better receiver characteristics?

10. A high-impedance amplifier has an effective input resistance of 4MΩ. Find the maximum bandwidth that may be obtained without equalization if the total capacitance is 6 pF and total effective load resistance is 2MΩ.