Optical Communication Mock Test 5

10%

Question 1 of 10

1. Determine wavelength at which photodiode is operating if energy of photons is 1.9*10^-19J?

2.33

1.04

1.48

3.91

Question 1 of 10

Question 2 of 10

2. Determine intrinsic region width for a photodiode having drift time of 4×10^-10 s and electron velocity of 2×10^-10ms^-1.

5×10^-5M

3×10^-5M

8×10^-5M

7×10^-5M

Question 2 of 10

Question 3 of 10

3. The diffusion process is _____________ as compared with drift.

Negligible

Very slow

Better

Very fast

Question 3 of 10

Question 4 of 10

4. If a photodiode requires incident optical power of 0.70 A/W. Determine photocurrent.

3.199

4.124

1.482

2.457

Question 4 of 10

Question 5 of 10

5. The InGaAsP is emitting LEDs are realized in terms of restricted are ____________

Current spreading

Coupled optical power

Radiance

Length strip geometry

Question 5 of 10

Question 6 of 10

6. For a GaAs LED, the coupling efficiency is 0.05. Compute the optical loss in decibels.

12.3 dB

13.01 dB

14 dB

14.6 dB

Question 6 of 10

Question 7 of 10

7. A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency.

0.65%

0.32%

0.18%

0.9%

Question 7 of 10

Question 8 of 10

8. Intrinsically _________________ are a very linear device.

Gain-guided

DH lasers

LEDs

Injection lasers

Question 8 of 10

Question 9 of 10

9. The fraction of incident photons generated by photodiode of electrons generated collected at detector is known as ___________________

Anger recombination

Quantum efficiency

Responsivity

Absorption coefficient

Question 9 of 10

Question 10 of 10

10. The absorption coefficient of semiconductor materials is strongly dependent on __________

Properties of material

Wavelength

Amplitude

Amount of light

Question 10 of 10