Engineering Physics II Mock Test 8

10%

Question 1 of 10

1. Which of the following materials cannot be used as solar cells materials?

GaAs

PbS

CdS

Question 1 of 10

Question 2 of 10

2. The current produced in reverse-bias is called as __________

Breakdown Current

Leakage Current

Reverse Current

Negative Current

Question 2 of 10

Question 3 of 10

3. In a circuit the load current is 5 mA and the unregulated output is 10 V. If the voltage drop across the Zener diode is 3 V, what should be the value of resistance?

125 Ω

100 Ω

50 Ω

150 Ω

Question 3 of 10

Question 4 of 10

4. The depletion region of the Zener diode is ____________

Thick

Very thick

Very Thin

Normal

Question 4 of 10

Question 5 of 10

5. The reverse breakdown voltage of LED is very low.

False

True

Question 5 of 10

Question 6 of 10

6. The I-V characteristics of a p-n junction diode is shown. What is the resistance of the junction when a forward bias of 2 V is applied?

20 Ω

80 Ω

40 Ω

60 Ω

Question 6 of 10

Question 7 of 10

7. If I_e is the current entering the emitter, I_b is the current leaving the base and I_c is the current leaving the collector in a p-n-p transistor used for amplification, what is the relation between I_e, I_b and I_c?

I_e < I_b + I_c

I_b < I_c

I_c < I_b

I_e < I_c

Question 7 of 10

Question 8 of 10

8. The voltage at which forward bias current increases rapidly is called as ___________

Breakdown Voltage

Forward Voltage

Voltage barrier

Knee Voltage

Question 8 of 10

Question 9 of 10

9. Which of the following would have highest wavelength?

Question 9 of 10

Question 10 of 10

10. Which of the following can be used to create a P-Type Semiconductor?

Question 10 of 10